Chop Etilgan Maqolalar, Patentlar va Monografiyalar
UrDU tadqiqotchilarining Scopus, Web of Science, Patent hamda xalqaro ilmiy nashrlari bazasi.
First-Principles Investigation of The Electronic Properties of Monolayer MoS₂ Using DFT-Based QuantumATK Simulations
In this work, the electronic properties of monolayer molybdenum disulfide (MoS2) were investigated using density functional theory (DFT) within the QuantumATK simulation environment. The band structure and density of st…
Electric conductivity of cotton and its dependence on fiber quality
Theoretical Analysis of Charge Transfer and Work Function Modulation at MoS₂/Graphene Heterointerface
Two-dimensional (2D) heterostructures composed of transition metal dichalcogenides (TMDs) and graphene have attracted significant attention due to their unique charge transport and interfacial properties. In this work, …
Comprehensive Numerical Modeling of Silicon Tunnel Junction for Application in Multijunction Monolithic Solar Cells
Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET
The self-heating effect on the fin field effect transistor (FinFET) is investigated. The dependence of the lattice temperature in the channel center of the transistor on the thickness of the gate oxide, as well as the b…
Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet
In this work, the influence of the local oxide trapped charge on the transfer Id-Vg characteristics and capacitance of the gatetoI. INTRODUCTION source (drain) connection of the silicon-on-insulator (SOI) structure-base…
Self-Heating Effects in Nanoscale MOSFETs
The ongoing miniaturization of metal-oxide-semiconductor field-effect transistors (MOSFETs) remains a central focus in the advancement of nanoelectronic technologies. As device dimensions continue to shrink into the nan…
Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization
A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor
Comparative study of the self-heating effect in the accumulation and inversion mode FinFETs
In this work, the self-heating effect in inversion mode FinFET and Junctionless (accumulation mode) FinFET is compared and the influence of the different electrical and geometric parameters on the self-heating effect ar…
Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET
In this work the impact of the doping profile in the source and drain areas on the self-heating effect in SOI FinFET is simulated at different doping levels in the channel. Constant profile as well as two types of analy…
Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET
In this work, the self-heating effect on the Junctionless FinFET is investigated. The dependence of lattice temperature in the channel center of the transistor on the thickness of gate oxide as well as back oxide is sim…
The Effect of Height on the Efficiency of Vertical Silicon Tunnel Junction Solar Cell for High Solar Concentration
In the paper, the effect of height on short circuit current density Jsc, open circuit voltage Voc, fill factor FF, and efficiency of the silicon vertical solar cell with two p-n junctions connected by tunnel junction is…
Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs
In this paper, degradation effects, such as self-heating effect (SHE) and drain-induced barrier lowering (DIBL) effect in 2D MoS2-based MOSFETs are investigated through simulations. The SHE is simulated based on the the…
Optimization of vertically stacked nanosheet FET immune to self-heating
Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET
In the paper the effect of local charge on capacitance of source-gate (drain-gate) transitions is considered in a nanoscale SOI FinFET. Capacitance-voltage characteristic of the source-gate transition is simulated by us…
Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET
We study the impact of channel shape, back oxide, and gate oxide on the self-heating performance in nanoscale junctionless Fin Field Effect Transistor through numerical simulation. The role of back oxide and gate oxide …
Memristors: types, characteristics and prospects of use as the main element of the future artificial intelligence
This paper reviews extant literature on the memristor as one of the main elements of neuromorphic computing, in particular, the future of artificial intelligence. It outlines the main characteristics and parameters of m…
Self heating and DIBL effects in 2D MoS2 based MOSFET with different gate oxide and back oxide materials
In the paper degradation effects such as the self-heating effect and DIBL effect in 2D MoS2 based MOSFET is investigated by simulations. It is considered transistors with Al2O3and HfO2as gate oxide and SiO2and HfO2as ba…
The effect of geometrical sizes on efficiency of vertical silicon tunnel junction solar cell for high solar concentration
In the paper the effect of height, base width and doping level on efficiency of the silicon vertical solar cell with two p-n junctions connected by tunnel junction, is investigated by 2D simulations. It is shown that th…
Эффект саморазогрева в беспереходных вертикальных полевых транзисторах на основе структур "кремний на изоляторе" с различной формой базы
In this work it is simulated the self-heating effect in nanoscale Silicon on Insulator Junctionless FinFET transistor with fin cross section in rectangular, trapeze and triangle form. It is shown that for considered tra…
Simulation of self-heating effect in MOSFET based on 2D MoS2
Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape
The influence of the channel shape in a junctionless silicon- on-insulator finned field-effect transistor (JL SOI FinFET) on the amplitude of random telegraph noise (RTN) induced by single interface trapped charge has b…
The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS<sub>2</sub> based MOSFET
In the paper the self-heating effect in a nanoscale planar MOSFET with a two-dimensional MoS2channel is investigated by simulations. The self-heating effect is simulated by using the thermodynamic transport model. Contr…
The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes
Abstract The self-heating effect is simulated in a nanoscale junctionless fin field-effect transistor fabricated on the basis of silicon-on-insulator structures with a transistor base cross section of a rectangular, tra…
Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries
In this work we study the self-heating effect (SHE) in nanoscale Silicon on Insulator Junctionless (SOI JL) FinFET transistor with fin cross section in rectangular, trapeze and triangle form. The lattice temperature dep…
The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes
Abstract The influence of the channel shape in a finned (vertical) field-effect transistor (FinFET) on the amplitude of random telegraph noise (RTN) induced by single interface trapped charge has been simulated for the …
ИССЛЕДОВАНИЯ РАСПРЕДЕЛЕНИЯ СИГНАЛА СЛУЧАЙНЫХ ТЕЛЕГРАФНЫХ ШУМОВ В НАНОРАЗМЕРНЫХ БЕЗПЕРЕХОДНЫХ FinFET ТРАНЗИСТОРАХ.
The amplitude of RTN in nanometer SOI FinFET with different channel shape
Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET
In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors. The influence of these defects …
Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection
In this paper, the dependence of the capacitance of lateral drain–substrate and source–substrate junctions on the linear size of the oxide trapped charge in MOSFET is simulated. It is shown that, at some range of linear…
Влияние формы канала на амплитуду случайных телеграфных шумов в подпороговой области беспереходного FinFET-транзистора
In this work it is simulated the random telegraph noise signal amplitude dependence on gate voltage overdrive for silicon on insulator junctionless FinFET transistor with fin cross section in rectangle and trapeze form.…
The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET
Abstract The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using…
Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer
Abstract The C–V characteristic of the lateral source–substrate junction in a metal–nitride–oxide–semiconductor transistor has been simulated. With a certain voltage across the junction that depends on the dopant concen…
Simulation study of short channel effects in low power FinFETs with different body shape and geometries
Simulation of DIBL effect and sub-threshold swing in low power junctionless MOSFETs with different geometries
INTERCAPACITANCE BETWEEN TWO CHARGES LOCATED IN THE DIFFERENT ENVIRONMENTS
New fast method for reading charge bit stored in MNOSFET
Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer
This paper discusses the limitations of scanning microscope to read localised charge and proposes a viable solution. A 2D simulation and characterisation of the capacitance-voltage (C-V) characteristics of the lateral s…
The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET
In this paper, we simulated the dependence of the effect of reducing the drain-induced barrier lowering on the thickness of a buried oxide layer in a finned (vertical) metal-oxide-semiconductor field effect transistor (…
Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate
Short channel effects such as DIBL are compared for trigate SOI Junctionless MOSFET with extended and non-extended lateral part of the gate.
Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes
Short channel effects, such as DIBL are compared for SOI-FinFETs with different silicon body geometries. The original device considered was straight without narrowing at the top and a set of devices that exhibit the men…
Linearized KdV equation on a metric graph
We address a linearized KdV equation on metric star graphs with one incoming finite bond and two outgoing semi-infinite bonds. Using the theory of potentials, we reduce the problem to systems of linear integral equation…
The lateral capacitance of nanometer mnosfet with a single charge trapped in oxide layeror at SiO2-Si3N4 interfaceat
Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET
Several sources of variability such as imperfections during the manufacturing process, variations in critical dimensions (eg. oxide thickness, gate length), or intrinsic parameter fluctuations (eg. random dopants), infl…
Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge
Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET
Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity
The behavior of GaN surfaces during photoassisted Kelvin probe force microscopy is demonstrated to be strongly dependant on surface polarity. The surface photovoltage of GaN surfaces illuminated with above-band gap ligh…
Tunable SiO2/Si-based nanostructures
We model the formation of a nanoscale potential well with quantum wires on the semiconductor surface near the SiO2/Si interface owing to a special charge distribution in the oxide. We consider an SiO2/Si structure in th…