Chop Etilgan Maqolalar, Patentlar va Monografiyalar

Electric conductivity of cotton and its dependence on fiber quality

Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

In this work, the influence of the local oxide trapped charge on the transfer Id-Vg characteristics and capacitance of the gatetoI. INTRODUCTION source (drain) connection of the silicon-on-insulator (SOI) structure-base…

The Effect of Height on the Efficiency of Vertical Silicon Tunnel Junction Solar Cell for High Solar Concentration

In the paper, the effect of height on short circuit current density Jsc, open circuit voltage Voc, fill factor FF, and efficiency of the silicon vertical solar cell with two p-n junctions connected by tunnel junction is…

Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

In the paper the effect of local charge on capacitance of source-gate (drain-gate) transitions is considered in a nanoscale SOI FinFET. Capacitance-voltage characteristic of the source-gate transition is simulated by us…

Memristors: types, characteristics and prospects of use as the main element of the future artificial intelligence

This paper reviews extant literature on the memristor as one of the main elements of neuromorphic computing, in particular, the future of artificial intelligence. It outlines the main characteristics and parameters of m…

The effect of geometrical sizes on efficiency of vertical silicon tunnel junction solar cell for high solar concentration

In the paper the effect of height, base width and doping level on efficiency of the silicon vertical solar cell with two p-n junctions connected by tunnel junction, is investigated by 2D simulations. It is shown that th…

The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

Abstract The influence of the channel shape in a finned (vertical) field-effect transistor (FinFET) on the amplitude of random telegraph noise (RTN) induced by single interface trapped charge has been simulated for the …

Simulation study of short channel effects in low power FinFETs with different body shape and geometries

INTERCAPACITANCE BETWEEN TWO CHARGES LOCATED IN THE DIFFERENT ENVIRONMENTS

The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

In this paper, we simulated the dependence of the effect of reducing the drain-induced barrier lowering on the thickness of a buried oxide layer in a finned (vertical) metal-oxide-semiconductor field effect transistor (…

Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

Short channel effects such as DIBL are compared for trigate SOI Junctionless MOSFET with extended and non-extended lateral part of the gate.

Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

Short channel effects, such as DIBL are compared for SOI-FinFETs with different silicon body geometries. The original device considered was straight without narrowing at the top and a set of devices that exhibit the men…

The lateral capacitance of nanometer mnosfet with a single charge trapped in oxide layeror at SiO2-Si3N4 interfaceat

Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

Several sources of variability such as imperfections during the manufacturing process, variations in critical dimensions (eg. oxide thickness, gate length), or intrinsic parameter fluctuations (eg. random dopants), infl…