Chop Etilgan Maqolalar, Patentlar va Monografiyalar
UrDU tadqiqotchilarining Scopus, Web of Science, Patent hamda xalqaro ilmiy nashrlari bazasi.
First-Principles Investigation of The Electronic Properties of Monolayer MoS₂ Using DFT-Based QuantumATK Simulations
In this work, the electronic properties of monolayer molybdenum disulfide (MoS2) were investigated using density functional theory (DFT) within the QuantumATK simulation environment. The band structure and density of st…
Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET
The self-heating effect on the fin field effect transistor (FinFET) is investigated. The dependence of the lattice temperature in the channel center of the transistor on the thickness of the gate oxide, as well as the b…
Comparative study of the self-heating effect in the accumulation and inversion mode FinFETs
In this work, the self-heating effect in inversion mode FinFET and Junctionless (accumulation mode) FinFET is compared and the influence of the different electrical and geometric parameters on the self-heating effect ar…
Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET
In this work the impact of the doping profile in the source and drain areas on the self-heating effect in SOI FinFET is simulated at different doping levels in the channel. Constant profile as well as two types of analy…
Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET
In this work, the self-heating effect on the Junctionless FinFET is investigated. The dependence of lattice temperature in the channel center of the transistor on the thickness of gate oxide as well as back oxide is sim…
The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes
Abstract The self-heating effect is simulated in a nanoscale junctionless fin field-effect transistor fabricated on the basis of silicon-on-insulator structures with a transistor base cross section of a rectangular, tra…
Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries
In this work we study the self-heating effect (SHE) in nanoscale Silicon on Insulator Junctionless (SOI JL) FinFET transistor with fin cross section in rectangular, trapeze and triangle form. The lattice temperature dep…
The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET
Abstract The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using…
Linearized KdV equation on a metric graph
We address a linearized KdV equation on metric star graphs with one incoming finite bond and two outgoing semi-infinite bonds. Using the theory of potentials, we reduce the problem to systems of linear integral equation…