Chop Etilgan Maqolalar, Patentlar va Monografiyalar

First-Principles Investigation of The Electronic Properties of Monolayer MoS₂ Using DFT-Based QuantumATK Simulations

In this work, the electronic properties of monolayer molybdenum disulfide (MoS2) were investigated using density functional theory (DFT) within the QuantumATK simulation environment. The band structure and density of st…

Theoretical Analysis of Charge Transfer and Work Function Modulation at MoS₂/Graphene Heterointerface

Two-dimensional (2D) heterostructures composed of transition metal dichalcogenides (TMDs) and graphene have attracted significant attention due to their unique charge transport and interfacial properties. In this work, …

Comprehensive Numerical Modeling of Silicon Tunnel Junction for Application in Multijunction Monolithic Solar Cells

Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET

The self-heating effect on the fin field effect transistor (FinFET) is investigated. The dependence of the lattice temperature in the channel center of the transistor on the thickness of the gate oxide, as well as the b…

Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

In this work, the influence of the local oxide trapped charge on the transfer Id-Vg characteristics and capacitance of the gatetoI. INTRODUCTION source (drain) connection of the silicon-on-insulator (SOI) structure-base…

Self-Heating Effects in Nanoscale MOSFETs

The ongoing miniaturization of metal-oxide-semiconductor field-effect transistors (MOSFETs) remains a central focus in the advancement of nanoelectronic technologies. As device dimensions continue to shrink into the nan…

Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization

A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

Comparative study of the self-heating effect in the accumulation and inversion mode FinFETs

In this work, the self-heating effect in inversion mode FinFET and Junctionless (accumulation mode) FinFET is compared and the influence of the different electrical and geometric parameters on the self-heating effect ar…

Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET

In this work the impact of the doping profile in the source and drain areas on the self-heating effect in SOI FinFET is simulated at different doping levels in the channel. Constant profile as well as two types of analy…

Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

In this work, the self-heating effect on the Junctionless FinFET is investigated. The dependence of lattice temperature in the channel center of the transistor on the thickness of gate oxide as well as back oxide is sim…

Optimization of vertically stacked nanosheet FET immune to self-heating

Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

We study the impact of channel shape, back oxide, and gate oxide on the self-heating performance in nanoscale junctionless Fin Field Effect Transistor through numerical simulation. The role of back oxide and gate oxide …

Эффект саморазогрева в беспереходных вертикальных полевых транзисторах на основе структур "кремний на изоляторе" с различной формой базы

In this work it is simulated the self-heating effect in nanoscale Silicon on Insulator Junctionless FinFET transistor with fin cross section in rectangular, trapeze and triangle form. It is shown that for considered tra…

Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

The influence of the channel shape in a junctionless silicon- on-insulator finned field-effect transistor (JL SOI FinFET) on the amplitude of random telegraph noise (RTN) induced by single interface trapped charge has b…

The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

Abstract The self-heating effect is simulated in a nanoscale junctionless fin field-effect transistor fabricated on the basis of silicon-on-insulator structures with a transistor base cross section of a rectangular, tra…

Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

In this work we study the self-heating effect (SHE) in nanoscale Silicon on Insulator Junctionless (SOI JL) FinFET transistor with fin cross section in rectangular, trapeze and triangle form. The lattice temperature dep…

ИССЛЕДОВАНИЯ РАСПРЕДЕЛЕНИЯ СИГНАЛА СЛУЧАЙНЫХ ТЕЛЕГРАФНЫХ ШУМОВ В НАНОРАЗМЕРНЫХ БЕЗПЕРЕХОДНЫХ FinFET ТРАНЗИСТОРАХ.

Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors. The influence of these defects …

Влияние формы канала на амплитуду случайных телеграфных шумов в подпороговой области беспереходного FinFET-транзистора

In this work it is simulated the random telegraph noise signal amplitude dependence on gate voltage overdrive for silicon on insulator junctionless FinFET transistor with fin cross section in rectangle and trapeze form.…

The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

Abstract The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using…

Simulation of DIBL effect and sub-threshold swing in low power junctionless MOSFETs with different geometries

Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

Short channel effects such as DIBL are compared for trigate SOI Junctionless MOSFET with extended and non-extended lateral part of the gate.

Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

Short channel effects, such as DIBL are compared for SOI-FinFETs with different silicon body geometries. The original device considered was straight without narrowing at the top and a set of devices that exhibit the men…