Abu Rayhon Beruniy nomidagi Urganch davlat universiteti
Ilmiy-Tadqiqot va Innovatsiyalar Markazi

First-Principles Investigation of The Electronic Properties of Monolayer MoS₂ Using DFT-Based QuantumATK Simulations

In this work, the electronic properties of monolayer molybdenum disulfide (MoS2) were investigated using density functional theory (DFT) within the QuantumATK simulation environment. The band structure and density of st…

Electric conductivity of cotton and its dependence on fiber quality

Theoretical Analysis of Charge Transfer and Work Function Modulation at MoS₂/Graphene Heterointerface

Two-dimensional (2D) heterostructures composed of transition metal dichalcogenides (TMDs) and graphene have attracted significant attention due to their unique charge transport and interfacial properties. In this work, …

Comprehensive Numerical Modeling of Silicon Tunnel Junction for Application in Multijunction Monolithic Solar Cells

Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET

The self-heating effect on the fin field effect transistor (FinFET) is investigated. The dependence of the lattice temperature in the channel center of the transistor on the thickness of the gate oxide, as well as the b…

Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

In this work, the influence of the local oxide trapped charge on the transfer Id-Vg characteristics and capacitance of the gatetoI. INTRODUCTION source (drain) connection of the silicon-on-insulator (SOI) structure-base…